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PMBFJ111,215

PMBFJ111,215

PMBFJ111,215

NXP USA Inc.

PMBFJ111,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

SOT-23

PMBFJ111,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBFJ111
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power - Max 300mW
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 6pF @ 10V VGS
JEDEC-95 Code TO-236AB
Drain-source On Resistance-Max 30Ohm
DS Breakdown Voltage-Min 40V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.3W
Current - Drain (Idss) @ Vds (Vgs=0) 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id 10V @ 1μA
Voltage - Breakdown (V(BR)GSS) 40V
Resistance - RDS(On) 30Ohm
RoHS Status ROHS3 Compliant
PMBFJ111,215 Product Details

PMBFJ111,215 Description


The PMBFJ111,215 is a Symmetrical N-channel junction FET in a SOT23 package. The field-effect transistor (FET) is a type of transistor that regulates the flow of current in a semiconductor by using an electric field. Devices containing FETs (JFETs or MOSFETs) have three terminals: the source, gate, and drain. By applying a voltage to the gate, which changes the conductivity between the drain and source, FETs may regulate the current flow.



PMBFJ111,215 Features


  • High-speed switching

  • Interchangeability of drain and source connections

  • Low RDSon at zero gate voltage (< 30 Ω for PMBFJ111)

  • It has better thermal stability

  • Have high gate-to-drain current resistance



PMBFJ111,215 Applications


  • Commutators

  • Multiplexers

  • Thin and thick film hybrids

  • Analog switches

  • Choppers


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