PMBFJ111,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website
SOT-23
PMBFJ111,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.95
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MBFJ111
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Operating Mode
DEPLETION MODE
Power - Max
300mW
FET Type
N-Channel
Transistor Application
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds
6pF @ 10V VGS
JEDEC-95 Code
TO-236AB
Drain-source On Resistance-Max
30Ohm
DS Breakdown Voltage-Min
40V
FET Technology
JUNCTION
Power Dissipation-Max (Abs)
0.3W
Current - Drain (Idss) @ Vds (Vgs=0)
20mA @ 15V
Voltage - Cutoff (VGS off) @ Id
10V @ 1μA
Voltage - Breakdown (V(BR)GSS)
40V
Resistance - RDS(On)
30Ohm
RoHS Status
ROHS3 Compliant
PMBFJ111,215 Product Details
PMBFJ111,215 Description
The PMBFJ111,215 is a Symmetrical N-channel junction FET in a SOT23 package. The field-effect transistor (FET) is a type of transistor that regulates the flow of current in a semiconductor by using an electric field. Devices containing FETs (JFETs or MOSFETs) have three terminals: the source, gate, and drain. By applying a voltage to the gate, which changes the conductivity between the drain and source, FETs may regulate the current flow.
PMBFJ111,215 Features
High-speed switching
Interchangeability of drain and source connections
Low RDSon at zero gate voltage (< 30 Ω for PMBFJ111)