PMBFJ112,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website
SOT-23
PMBFJ112,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.95
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MBFJ112
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Operating Mode
DEPLETION MODE
Power - Max
300mW
FET Type
N-Channel
Transistor Application
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds
6pF @ 10V VGS
JEDEC-95 Code
TO-236AB
Drain-source On Resistance-Max
50Ohm
DS Breakdown Voltage-Min
40V
FET Technology
JUNCTION
Power Dissipation-Max (Abs)
0.3W
Current - Drain (Idss) @ Vds (Vgs=0)
5mA @ 15V
Voltage - Cutoff (VGS off) @ Id
5V @ 1μA
Voltage - Breakdown (V(BR)GSS)
40V
Resistance - RDS(On)
50Ohm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.872854
$2.872854
10
$2.710240
$27.1024
100
$2.556830
$255.683
500
$2.412104
$1206.052
1000
$2.275570
$2275.57
PMBFJ112,215 Product Details
PMBFJ112,215 Description
N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).
PMBFJ112,215 Features
High-speed switching
Interchangeability of drain and source connections
Low RDSon at zero gate voltage (< 30 W for PMBFJ111).