Welcome to Hotenda.com Online Store!

logo
userjoin
Home

PMBFJ112,215

PMBFJ112,215

PMBFJ112,215

NXP USA Inc.

PMBFJ112,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

SOT-23

PMBFJ112,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBFJ112
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power - Max 300mW
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 6pF @ 10V VGS
JEDEC-95 Code TO-236AB
Drain-source On Resistance-Max 50Ohm
DS Breakdown Voltage-Min 40V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.3W
Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 15V
Voltage - Cutoff (VGS off) @ Id 5V @ 1μA
Voltage - Breakdown (V(BR)GSS) 40V
Resistance - RDS(On) 50Ohm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.872854 $2.872854
10 $2.710240 $27.1024
100 $2.556830 $255.683
500 $2.412104 $1206.052
1000 $2.275570 $2275.57
PMBFJ112,215 Product Details

PMBFJ112,215                  Description

 

N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).



PMBFJ112,215                  Features


High-speed switching

Interchangeability of drain and source connections

 Low RDSon at zero gate voltage (< 30 W for PMBFJ111).

 

 PMBFJ112,215                    Applications

 Analog switches

Choppers

Commutators

 Multiplexers

 Thin and thick film hybrids.

 


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News