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PMBFJ177,215

  • PMBFJ177,215
  • PMBFJ177,215

PMBFJ177,215

PMBFJ177,215

NXP USA Inc.

PMBFJ177,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

SOT-23

PMBFJ177,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBFJ177
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power - Max 300mW
FET Type P-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 8pF @ 10V VGS
Drain-source On Resistance-Max 300Ohm
DS Breakdown Voltage-Min 30V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.3W
Current - Drain (Idss) @ Vds (Vgs=0) 1.5mA @ 15V
Voltage - Cutoff (VGS off) @ Id 800mV @ 10nA
Voltage - Breakdown (V(BR)GSS) 30V
Resistance - RDS(On) 300Ohm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.16568 $0.49704
6,000 $0.15696 $0.94176
15,000 $0.14824 $2.2236
30,000 $0.14388 $4.3164
PMBFJ177,215 Product Details

PMBFJ177,215 Description


PMBFJ177,215 is a 30V P-channel silicon field-effect transistor. The NXP PMBFJ177,215 is intended for application with analog switches, choppers, commutators, etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. The Operating and Storage Temperature Range is between -65 and 150℃. And the transistor PMBFJ177,215 is in the SOT-23 package with 300mW power dissipation.



PMBFJ177,215 Features


Drain-source voltage:  30 V

Gate current (d.c.): 50 mA

Total power dissipation up to Tamb = 25℃ 300 mW

Storage temperature range: ?65 to 150℃ 

Drain-source ON-resistance: 300Ω ?



PMBFJ177,215 Applications


Industrial 

Medical 

Enterprise systems 

Enterprise projectors 

Personal electronics 

Tablets 


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