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PMD5001K,115

PMD5001K,115

PMD5001K,115

NXP USA Inc.

PMD5001K,115 datasheet pdf and Transistors - Special Purpose product details from NXP USA Inc. stock available on our website

SOT-23

PMD5001K,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Applications Gate Driver
Voltage - Rated 40V
Current Rating (Amps) 100mA
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP + Base-Emitter Diode
Collector Current-Max (IC) 0.1A
DC Current Gain-Min (hFE) 24
Collector-Emitter Voltage-Max 40V
RoHS Status ROHS3 Compliant
PMD5001K,115 Product Details

PMD5001K,115                   Description


The metaloxidesemiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.

 

PMD5001K,115              Features


·Pb-Free Package is Available

 

PMD5001K,115              Applications


Memory Termination Requlator for DDRDDR2

DDR3.DDR3Land DDR4 VTT Termination

Low-Voltage Applications for 1-V to 6-VInput Rails


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