PMD5001K,115 datasheet pdf and Transistors - Special Purpose product details from NXP USA Inc. stock available on our website
SOT-23
PMD5001K,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN
Applications
Gate Driver
Voltage - Rated
40V
Current Rating (Amps)
100mA
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP + Base-Emitter Diode
Collector Current-Max (IC)
0.1A
DC Current Gain-Min (hFE)
24
Collector-Emitter Voltage-Max
40V
RoHS Status
ROHS3 Compliant
PMD5001K,115 Product Details
PMD5001K,115 Description
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
PMD5001K,115 Features
·Pb-Free Package is Available
PMD5001K,115 Applications
Memory Termination Requlator for DDRDDR2
DDR3.DDR3Land DDR4 VTT Termination
Low-Voltage Applications for 1-V to 6-VInput Rails