PSMN8R5-108ESQ

new-10%

Manufacturer part number:PSMN8R5-108ESQ

Manufacturer:NXP USA Inc.

Description:MOSFET N-CH 108V 100A I2PAK

Case Package:SOT-23

Datasheet:PSMN8R5-108ESQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
Reference Standard	IEC-60134
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	263W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.5m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5512pF @ 50V
Current - Continuous Drain (Id) @ 25°C	100A Tj
Gate Charge (Qg) (Max) @ Vgs	111nC @ 10V
Drain to Source Voltage (Vdss)	108V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	100A
Drain-source On Resistance-Max	0.0085Ohm
Pulsed Drain Current-Max (IDM)	429A
DS Breakdown Voltage-Min	108V
Avalanche Energy Rating (Eas)	219 mJ
RoHS Status	ROHS3 Compliant