1N4446

new-10%

Manufacturer part number:1N4446

Manufacturer:ON Semiconductor

Description:DIODE GEN PURP 100V 200MA DO35

Case Package:SOT-23

Datasheet:1N4446 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	DO-204AH, DO-35, Axial
Number of Pins	2
Supplier Device Package	DO-35
Packaging	Bulk
Published	2003
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-65°C
Capacitance	4pF
Voltage - Rated DC	100V
Current Rating	100A
Base Part Number	1N4446
Polarity	Standard
Element Configuration	Single
Speed	Small Signal =< 200mA (Io), Any Speed
Diode Type	Standard
Current - Reverse Leakage @ Vr	25nA @ 20V
Power Dissipation	500mW
Output Current	200mA
Voltage - Forward (Vf) (Max) @ If	1V @ 20mA
Operating Temperature - Junction	175°C Max
Max Surge Current	4A
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io)	200mA
Forward Voltage	1V
Max Reverse Voltage (DC)	100V
Average Rectified Current	200mA
Reverse Recovery Time	4 ns
Peak Reverse Current	25nA
Capacitance @ Vr, F	4pF @ 0V 1MHz
Peak Non-Repetitive Surge Current	4A
Reverse Voltage	100V
Recovery Time	4 ns
RoHS Status	RoHS Compliant
Lead Free	Lead Free