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1N4446TR

1N4446TR

1N4446TR

ON Semiconductor

DIODE GEN PURP 100V 200MA DO35

SOT-23

1N4446TR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case DO-204AH, DO-35, Axial
Supplier Device Package DO-35
PackagingTape & Reel (TR)
Published 2003
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 1N4446
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 25nA @ 20V
Voltage - Forward (Vf) (Max) @ If 1V @ 20mA
Operating Temperature - Junction 175°C Max
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 200mA
Reverse Recovery Time 4ns
Capacitance @ Vr, F 4pF @ 0V 1MHz
In-Stock:4607 items

About 1N4446TR

The 1N4446TR from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 100V 200MA DO35.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 1N4446TR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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