2N3014 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N3014 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-206AC, TO-52-3 Metal Can
Supplier Device Package
TO-52-3
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N3014
Power - Max
300mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 30mA 400mV
Current - Collector Cutoff (Max)
300nA
Vce Saturation (Max) @ Ib, Ic
350mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
350MHz
RoHS Status
Non-RoHS Compliant
In-Stock:3695 items
2N3014 Product Details
2N3014 Description
The ON Semiconductor 2N3014 is a silicon planar epitaxial NPN transistor in the Jedec TO-18 metal case intended for high-speed low saturation switching applications up to 300 mA.
2N3014 Features
Silioon planar epitaxial NPN
Excellent Safe Operating Area
Pb-Free Packages are Available
2N3014 Applications
Industrial
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