2N3904RL1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 300MHz is present in the part.Single BJT transistor can take a breakdown input voltage of 40V volts.A maximum collector current of 200mA volts can be achieved.
2N3904RL1G Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 300MHz
2N3904RL1G Applications
There are a lot of ON Semiconductor 2N3904RL1G applications of single BJT transistors.
- Inverter
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- Driver
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- Muting
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- Interface
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