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2N4402TFR

2N4402TFR

2N4402TFR

ON Semiconductor

2N4402TFR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N4402TFR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N4402
Power - Max 625mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 600mA
2N4402TFR Product Details

2N4402TFR Overview


DC current gain in this device equals 50 @ 150mA 2V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Product comes in TO-92-3 supplier package.There is a 40V maximal voltage in the device due to collector-emitter breakdown.

2N4402TFR Features


the DC current gain for this device is 50 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the supplier device package of TO-92-3

2N4402TFR Applications


There are a lot of ON Semiconductor 2N4402TFR applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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