2N4402TFR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N4402TFR Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N4402
Power - Max
625mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
600mA
2N4402TFR Product Details
2N4402TFR Overview
DC current gain in this device equals 50 @ 150mA 2V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Product comes in TO-92-3 supplier package.There is a 40V maximal voltage in the device due to collector-emitter breakdown.
2N4402TFR Features
the DC current gain for this device is 50 @ 150mA 2V the vce saturation(Max) is 750mV @ 50mA, 500mA the supplier device package of TO-92-3
2N4402TFR Applications
There are a lot of ON Semiconductor 2N4402TFR applications of single BJT transistors.