2N5401RLRM Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of -600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 100MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
2N5401RLRM Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -600mA
a transition frequency of 100MHz
2N5401RLRM Applications
There are a lot of ON Semiconductor 2N5401RLRM applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
