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2N5457G

2N5457G

2N5457G

ON Semiconductor

2N5457G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

2N5457G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 11 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 135°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW NOISE
HTS Code 8541.21.00.95
Voltage - Rated DC 25V
Max Power Dissipation 310mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 10mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5457
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 200mW
FET Type N-Channel
Transistor Application SWITCHING
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 15V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 25V
FET Technology JUNCTION
Drain to Source Resistance 2mOhm
Current - Drain (Idss) @ Vds (Vgs=0) 1mA @ 15V
Voltage - Cutoff (VGS off) @ Id 500mV @ 10nA
RoHS Status RoHS Compliant
Lead Free Lead Free
2N5457G Product Details

2N5457G                   Description


 N?Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications.


2N5457G                      Features


? N?Channel for Higher Gain

? Drain and Source Interchangeable

? High AC Input Impedance

? High DC Input Resistance

? Low Transfer and Input Capacitance

? Low Cross?Modulation and Intermodulation Distortion

? Plastic Encapsulated Package

? Pb?Free Packages are Available*

 


 

2N5457G                        Applications


·AM tuner RF amplifier

·Low-noise amplifier


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