2N5639_D26Z datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
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2N5639_D26Z Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2003
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N5639
Power - Max
350mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
10pF @ 12V VGS
Current - Drain (Idss) @ Vds (Vgs=0)
25mA @ 20V
Voltage - Breakdown (V(BR)GSS)
30V
Resistance - RDS(On)
60Ohm
2N5639_D26Z Product Details
2N5639_D26Z Description
2N5639_D26Z is a 30V N-Channel JFET Chopper Transistor. The Onsemi N-Channel Junction Field Effect Transistor, depletion mode (Type A) 2N5639_D26Z is designed for chopper and high-speed switching applications, such as audio and signal processing. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor 2N5639_D26Z is in the TO-3P-3 package with 350mW power dissipation.
2N5639_D26Z Features
Low Drain-Source "ON" Resistance:
RDS(on) = 30Ω for 2N5638
RDS(on) = 60Ω for 2N5639
Low Reverse Transfer Capacitance Crss = 4.0 pF (Max) @ f = 1.0 MHz
Fast Switching Characteristics tr = 5.0 ns (Max) (2N5638)