2N5952 RF Amplifier Description


The 2N5952 is an N-Channel RF Amplifier which can be sourced from process 50. This device is designed primarily for electronic switching applications such as low on resistance analog switching. It is commonly used as a replacement of the 2N5457 in phase circuits.


2N5952 JEFT MOSFET Features


Maximum Power Dissipation (Pd): 0.36 W
Maximum Drain-Source Voltage (Vds): 30 V
Maximum Gate-Source Voltage (Vgs): 3 V
Power Dissipation: 350mW
Maximum Drain Current |Id|: 8mA
Low On Resistance
Maximum Junction Temperature : 150 °C (Tj)


2N5952 Transistor Applications


Electronic Switches
Phase Circuits
Amplifiers
Analog Devices
Buffers
Choppers