2N6427 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 1.5V @ 500μA, 500mA, transistor means Ic has reached transistors maximum value (saturated).A 500mA continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As you can see, the part has a transition frequency of 130MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.Single BJT transistor is possible to have a collector current as low as 1.2A volts at Single BJT transistors maximum.
2N6427 Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 1.2A
a transition frequency of 130MHz
2N6427 Applications
There are a lot of ON Semiconductor 2N6427 applications of single BJT transistors.
- Driver
-
- Muting
-
- Inverter
-
- Interface
-
