2N7000G Description

The On Semiconductor 2N7000G is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and On Semiconductor’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. On Semiconductor’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. More informations please see 2N7000G datasheet.


2N7000G Features

? AEC Qualified
? PPAP Capable
? Ease of paralleling
? This is a Pb?Free Device*
? Excellent thermal stability
? Integral source-drain diode
? Low power drive requirement
? Free from secondary breakdown
? Low CISS and fast switching speeds
? High input impedance and high gain

2N7000G Applications

? Converters
? Amplifiers
? Switches
? Motor controls
? Power supply circuits
? Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)