2SA2099 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA2099 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code
8541.29.00.75
Max Power Dissipation
2W
Pin Count
3
Number of Elements
1
Element Configuration
Single
Case Connection
ISOLATED
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 2V
Current - Collector Cutoff (Max)
10μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
500mV @ 250mA, 5A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
130MHz
Frequency - Transition
130MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
RoHS Compliant
2SA2099 Product Details
2SA2099 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.Parts of this part have transition frequencies of 130MHz.The maximum collector current is 10A volts.
2SA2099 Features
the DC current gain for this device is 200 @ 1A 2V the vce saturation(Max) is 500mV @ 250mA, 5A the emitter base voltage is kept at 5V a transition frequency of 130MHz
2SA2099 Applications
There are a lot of ON Semiconductor 2SA2099 applications of single BJT transistors.