2SA2112-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA2112-AN Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
LIFETIME (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
SC-71
Surface Mount
YES
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Subcategory
Other Transistors
Max Power Dissipation
1W
Pin Count
3
Element Configuration
Single
Gain Bandwidth Product
390MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 10V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
3A
Max Frequency
390MHz
Collector Emitter Saturation Voltage
-135mV
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-6V
hFE Min
200
Height
4.5mm
Length
6.9mm
Width
2.5mm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2SA2112-AN Product Details
2SA2112-AN Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 10V.The collector emitter saturation voltage is -135mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 100mA, 2A.An emitter's base voltage can be kept at -6V to gain high efficiency.The maximum collector current is 3A volts.
2SA2112-AN Features
the DC current gain for this device is 200 @ 100mA 10V a collector emitter saturation voltage of -135mV the vce saturation(Max) is 700mV @ 100mA, 2A the emitter base voltage is kept at -6V
2SA2112-AN Applications
There are a lot of ON Semiconductor 2SA2112-AN applications of single BJT transistors.