2SA2127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2SA2127 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
SWITCHING
Gain Bandwidth Product
420MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
JEDEC-95 Code
TO-226AE
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
2A
Transition Frequency
420MHz
Collector Emitter Saturation Voltage
-200mV
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-6V
hFE Min
200
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.18000
$0.18
500
$0.1782
$89.1
1000
$0.1764
$176.4
1500
$0.1746
$261.9
2000
$0.1728
$345.6
2500
$0.171
$427.5
2SA2127 Product Details
2SA2127 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.In this part, there is a transition frequency of 420MHz.A maximum collector current of 2A volts can be achieved.
2SA2127 Features
the DC current gain for this device is 200 @ 100mA 2V a collector emitter saturation voltage of -200mV the vce saturation(Max) is 400mV @ 50mA, 1A the emitter base voltage is kept at -6V a transition frequency of 420MHz
2SA2127 Applications
There are a lot of ON Semiconductor 2SA2127 applications of single BJT transistors.