2SB1216S-H Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.The base voltage of the emitter can be kept at -6V to achieve high efficiency.There is a transition frequency of 130MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
2SB1216S-H Features
the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz
2SB1216S-H Applications
There are a lot of ON Semiconductor 2SB1216S-H applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
