2SB1216T-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 5V.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at -6V for high efficiency.When collector current reaches its maximum, it can reach 4A volts.
2SB1216T-TL-E Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -6V
2SB1216T-TL-E Applications
There are a lot of ON Semiconductor 2SB1216T-TL-E applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
