2SB1216T-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SB1216T-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
HTS Code
8541.29.00.75
Max Power Dissipation
1W
Reach Compliance Code
not_compliant
Base Part Number
2SB1216
Pin Count
3
Power - Max
1W
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
130MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
-6V
hFE Min
70
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.077440
$3.07744
10
$2.903245
$29.03245
100
$2.738911
$273.8911
500
$2.583878
$1291.939
1000
$2.437621
$2437.621
2SB1216T-TL-E Product Details
2SB1216T-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 5V.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at -6V for high efficiency.When collector current reaches its maximum, it can reach 4A volts.
2SB1216T-TL-E Features
the DC current gain for this device is 200 @ 500mA 5V the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at -6V
2SB1216T-TL-E Applications
There are a lot of ON Semiconductor 2SB1216T-TL-E applications of single BJT transistors.