2SC3649T-TD-H Overview
DC current gain in this device equals 200 @ 100mA 5V, which is the ratio of the base current to the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 50mA, 500mA.Keeping the emitter base voltage at -6V can result in a high level of efficiency.The part has a transition frequency of 120MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
2SC3649T-TD-H Features
the DC current gain for this device is 200 @ 100mA 5V
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz
2SC3649T-TD-H Applications
There are a lot of ON Semiconductor 2SC3649T-TD-H applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
