2SC4135T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC4135T-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
1W
Base Part Number
2SC4135
Pin Count
3
Power - Max
1W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
-6V
hFE Min
100
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.73000
$0.73
10
$0.64100
$6.41
100
$0.49150
$49.15
500
$0.38850
$194.25
2SC4135T-E Product Details
2SC4135T-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at -6V, an efficient operation can be achieved.In extreme cases, the collector current can be as low as 2A volts.
2SC4135T-E Features
the DC current gain for this device is 200 @ 100mA 5V the vce saturation(Max) is 400mV @ 100mA, 1A the emitter base voltage is kept at -6V
2SC4135T-E Applications
There are a lot of ON Semiconductor 2SC4135T-E applications of single BJT transistors.