2SC4487T-AN Overview

This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.

2SC4487T-AN Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V

2SC4487T-AN Applications

There are a lot of ON Semiconductor 2SC4487T-AN applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting