2SC5227A-4-TB-E Description

2SC5227A-4-TB-E is a 10v NPN single CP RF transistor. The RF MOSFETs are metal-oxide-semiconductor field effect transistor that is designed to operate at high frequencies, typically between 100MHz and well into the GHz range.  The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor 2SC5227A-4-TB-E in the SOT-23-3 package with 200mW power dissipation.

2SC5227A-4-TB-E Features

Low-noise

High gain

High cut-off frequency

Collector-to-Base Voltage: 20v

Collector-to-Emitter Voltage: 10v

Collector Current: 70mA

Collector Dissipation: 200mW

2SC5227A-4-TB-E Applications

Stereo amplifiers

Radio transmitters

Television monitors