2SD1624T-TD-H Overview

This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 2A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In the part, the transition frequency is 150MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

2SD1624T-TD-H Features

the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

2SD1624T-TD-H Applications

There are a lot of ON Semiconductor 2SD1624T-TD-H applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface