2SJ652

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Manufacturer part number:2SJ652

Manufacturer:ON Semiconductor

Description:2SJ652 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:2SJ652 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2003
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	2W Ta 30W Tc
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power Dissipation	30W
Case Connection	ISOLATED
Turn On Delay Time	33 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	38m Ω @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds	4360pF @ 20V
Current - Continuous Drain (Id) @ 25°C	28A Ta
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Rise Time	210ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	180 ns
Turn-Off Delay Time	310 ns
Continuous Drain Current (ID)	28A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0555Ohm
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	112A
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free