2SK3666-2-TB-E              Description

N – Channel JFET ?It consists of an n – type silicon bar forming the conduction channel for the charge carriers. The pn – junction forming diodes are connected internally and a common terminal called GATE is taken out from the p - Region. The other two terminals viz. Source and Drain are taken out from the bar.

2SK3666-2-TB-E                 Applications

·Low-frequency general-purpose amplifier

 impedance conversion 

infrared sensor applications

2SK3666-2-TB-E                 Features

·Small IGSS

·Small Ciss