2SK3666-4-TB-E datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
2SK3666-4-TB-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e6
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
200mW
Base Part Number
2SK3666
Element Configuration
Single
Power Dissipation
200mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
4pF @ 10V
Continuous Drain Current (ID)
10mA
Gate to Source Voltage (Vgs)
-30V
Drain to Source Breakdown Voltage
30V
Current - Drain (Idss) @ Vds (Vgs=0)
2.5mA @ 10V
Voltage - Cutoff (VGS off) @ Id
180mV @ 1μA
Voltage - Breakdown (V(BR)GSS)
30V
Resistance - RDS(On)
200Ohm
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2SK3666-4-TB-E Product Details
2SK3666-4-TB-E Description
2SK3666-4-TB-E, manufactured by On Semiconductor and distributed by Utmel Electronics. Its category belongs to Electronic Components ICs. It is applied to many fields, like Automotive Hybrid, electric & powertrain systems Communications equipment Wired networking Enterprise systems Enterprise projectors. And the main parameters of this part is Junction FET 30V 10mA IDSS 0.6 to 10 mA N-Channel Single CP. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).
