4N25TM

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4N25TM

Manufacturer part number:4N25TM

Manufacturer:ON Semiconductor

Description:4N25TM datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:4N25TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	6-DIP (0.400, 10.16mm)
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~100°C
Packaging	Tube
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	FAST SWITCHING
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	4N25
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Voltage - Isolation	7500Vpk
Output Type	Transistor with Base
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Operating Mode	ENHANCEMENT MODE
Voltage - Forward (Vf) (Typ)	1.18V
Case Connection	DRAIN
Input Type	DC
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
Voltage - Output (Max)	30V
Drain Current-Max (Abs) (ID)	44A
Drain-source On Resistance-Max	0.069Ohm
DS Breakdown Voltage-Min	250V
Current - DC Forward (If) (Max)	60mA
Avalanche Energy Rating (Eas)	2055 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Current Transfer Ratio (Min)	20% @ 10mA
Power Dissipation-Max (Abs)	307W
Turn On / Turn Off Time (Typ)	2μs, 2μs
Vce Saturation (Max)	500mV