4N26M

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4N26M

Manufacturer part number:4N26M

Manufacturer:ON Semiconductor

Description:4N26M datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:4N26M Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	7 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	6-DIP (0.300, 7.62mm)
Number of Pins	6
Supplier Device Package	6-DIP
Weight	855mg
Operating Temperature	-40°C~100°C
Packaging	Tube
Published	2008
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	100°C
Min Operating Temperature	-40°C
Max Power Dissipation	250mW
Base Part Number	4N26
Voltage - Isolation	4170Vrms
Output Voltage	30V
Output Type	Transistor with Base
Number of Elements	1
Number of Channels	1
Number of Circuits	1
Power Dissipation	200mW
Voltage - Forward (Vf) (Typ)	1.18V
Input Type	DC
Forward Current	60mA
Max Output Voltage	30V
Breakdown Voltage	30V
Rise Time	2μs
Forward Voltage	1.5V
Fall Time (Typ)	2 μs
Collector Emitter Voltage (VCEO)	500mV
Reverse Breakdown Voltage	6V
Voltage - Output (Max)	30V
Max Input Current	60mA
Collector Emitter Saturation Voltage	500mV
Current - DC Forward (If) (Max)	60mA
Current Transfer Ratio (Min)	20% @ 10mA
Input Current	10mA
Turn On / Turn Off Time (Typ)	2μs, 2μs
Vce Saturation (Max)	500mV
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free