AML2002 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 125mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 220mV @ 35mA, 350mA, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 8V can result in a high level of efficiency.A transition frequency of 120MHz is present in the part.When collector current reaches its maximum, it can reach 700mA volts.

AML2002 Features

the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of 125mV
the vce saturation(Max) is 220mV @ 35mA, 350mA
the emitter base voltage is kept at 8V
a transition frequency of 120MHz

AML2002 Applications

There are a lot of ON Semiconductor AML2002 applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface