BAS21DW5T1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
SOT-23
BAS21DW5T1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
5-TSSOP, SC-70-5, SOT-353
Surface Mount
YES
Number of Pins
5
Diode Element Material
SILICON
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Capacitance
5pF
Subcategory
Other Diodes
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BAS21DW5
Pin Count
5
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Dual
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
100nA @ 200V
Power Dissipation
385mW
Voltage - Forward (Vf) (Max) @ If
1.25V @ 200mA
Forward Current
200mA
Max Reverse Leakage Current
100nA
Operating Temperature - Junction
150°C Max
Max Surge Current
625mA
Output Current-Max
0.2A
Halogen Free
Halogen Free
Current - Average Rectified (Io)
200mA DC
Forward Voltage
1.25V
Max Reverse Voltage (DC)
250V
Average Rectified Current
200mA
Reverse Recovery Time
50 ns
Max Repetitive Reverse Voltage (Vrrm)
250V
Peak Non-Repetitive Surge Current
625mA
Diode Configuration
2 Independent
Max Forward Surge Current (Ifsm)
625mA
Recovery Time
50 ns
Reverse Test Voltage
200V
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BAS21DW5T1G Product Details
BAS21DW5T1G Overview
As long as the forward voltage is set to 1.25V, the device will operate.0.2A is its maximum output voltage.Surge currents should be monitored and prevented from exceeding 625mA.Devices that have a forward voltage of 200mA will operate.Capacitance in this device is approximately 5pF farads.When reverse biased, its maximal reverse leakage current is 100nA, which corresponds to its maximum reverse leakage current.Because of this device's primary action, array produces 385mW of heat (energy loss).
BAS21DW5T1G Features
1.25V forward voltage a maximum output voltage of 0.2A 5pF farads
BAS21DW5T1G Applications
There are a lot of ON Semiconductor BAS21DW5T1G applications of rectifier diode array.