BAS21SLT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
SOT-23
BAS21SLT1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.10.00.70
Capacitance
5pF
Subcategory
Rectifier Diodes
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
225mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BAS21S
Pin Count
3
Number of Elements
2
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
100nA @ 200V
Power Dissipation
300mW
Voltage - Forward (Vf) (Max) @ If
1.25V @ 200mA
Forward Current
225mA
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
625mA
Output Current-Max
0.225A
Halogen Free
Halogen Free
Current - Average Rectified (Io)
225mA DC
Forward Voltage
1.25V
Max Reverse Voltage (DC)
250V
Average Rectified Current
225mA
Reverse Recovery Time
50 ns
Peak Reverse Current
100μA
Max Repetitive Reverse Voltage (Vrrm)
250V
Peak Non-Repetitive Surge Current
625mA
Diode Configuration
1 Pair Series Connection
Max Forward Surge Current (Ifsm)
625mA
Recovery Time
50 ns
Height
1.01mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BAS21SLT1G Product Details
BAS21SLT1G Overview
In the case of 1.25V forward voltage, the device will operate.Array is capable of supporting a maximum output voltage of 0.225A.Monarrayoring the surge current and preventing array from exceeding 625mA should be the rule.The device operates when the forward voltage is set to 225mA.Array is possible to draw current from the part of 225mA.Capacitance in this device is approximately 5pF farads.In devices such as this one, reverse voltage peak is set at 100μA.Its maximal reverse leakage current is 1μA, which is the current from that semiconductor device when the device is reverse biased.Due to its primary action, this electronic or electrical device produces 300mW of heat (energy loss).
BAS21SLT1G Features
1.25V forward voltage a maximum output voltage of 0.225A 5pF farads a peak voltage of 100μA a reverse voltage peak of 100μA
BAS21SLT1G Applications
There are a lot of ON Semiconductor BAS21SLT1G applications of rectifier diode array.