BC237BRL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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BC237BRL1G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Contact Plating
Copper, Silver, Tin
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
EUROPEAN PART NUMBER
Subcategory
Other Transistors
Voltage - Rated DC
45V
Max Power Dissipation
1W
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC237
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
200mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BC237BRL1G Product Details
BC237BRL1G Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 200MHz.An input voltage of 45V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC237BRL1G Features
the DC current gain for this device is 200 @ 2mA 5V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 600mV @ 5mA, 100mA the emitter base voltage is kept at 6V the current rating of this device is 100mA a transition frequency of 200MHz
BC237BRL1G Applications
There are a lot of ON Semiconductor BC237BRL1G applications of single BJT transistors.