BC32725BU Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -700mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 100MHz.The breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as -800mA volts.

BC32725BU Features

the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 100MHz

BC32725BU Applications

There are a lot of ON Semiconductor BC32725BU applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver