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BC373G

BC373G

BC373G

ON Semiconductor

BC373G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC373G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2006
JESD-609 Code e1
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating1A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC373
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.1V @ 250μA, 250mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage1.1V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 12V
hFE Min 8000
Continuous Collector Current 1A
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1906 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.089520$0.08952
500$0.065824$32.912
1000$0.054853$54.853
2000$0.050324$100.648
5000$0.047032$235.16
10000$0.043750$437.5
15000$0.042312$634.68
50000$0.041604$2080.2

BC373G Product Details

BC373G Overview


DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.1V @ 250μA, 250mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Its current rating is 1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Collector current can be as low as 1A volts at its maximum.

BC373G Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 250μA, 250mA
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 200MHz

BC373G Applications


There are a lot of ON Semiconductor BC373G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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