BC635ZL1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A 1A continuous collector voltage is necessary to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.The part has a transition frequency of 200MHz.When collector current reaches its maximum, it can reach 1A volts.
BC635ZL1G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 200MHz
BC635ZL1G Applications
There are a lot of ON Semiconductor BC635ZL1G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
