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BC847CDW1T1G

  • BC847CDW1T1G
  • BC847CDW1T1G

BC847CDW1T1G

BC847CDW1T1G

ON Semiconductor

TRANS 2NPN 45V 0.1A SOT363

SOT-23

BC847CDW1T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation 380mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC847CD
Pin Count 6
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 380mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Gain Bandwidth Product 100MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 600mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 420
Height 1.1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04209 $0.12627
6,000 $0.03679 $0.22074
15,000 $0.03150 $0.4725
30,000 $0.02974 $0.8922
75,000 $0.02797 $2.09775
150,000 $0.02503 $3.7545
BC847CDW1T1G Product Details
Description:

The BC847CDW1T1G is a 2 NPN bipolar transistor array in a SOT-363 package from ON Semiconductor. It has a collector-emitter voltage of 45V and a collector current of 0.1A.

Features:

• 2 NPN transistors in a single package
• Collector-emitter voltage of 45V
• Collector current of 0.1A
• Low collector-emitter saturation voltage
• Low noise
• High gain
• RoHS compliant

Applications:

The BC847CDW1T1G is suitable for a wide range of applications, including:
• Switching
• Amplification
• Signal processing
• Power management
• Automotive electronics
• Industrial control

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