BC848CPDW1T1G

new-10%

Manufacturer part number:BC848CPDW1T1G

Manufacturer:ON Semiconductor

Description:ON SEMICONDUCTOR - BC848CPDW1T1G - BIPOLAR TRANSISTOR, NPN & PNP, 30V, FULL REEL

Case Package:SOT-23

Datasheet:BC848CPDW1T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	30V
Max Power Dissipation	380mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
Frequency	100MHz
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	380mW
Power - Max	250mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	100MHz
Transistor Type	NPN, PNP
Collector Emitter Voltage (VCEO)	30V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	420 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage	30V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	600mV
Max Breakdown Voltage	40V
Collector Base Voltage (VCBO)	30V
Emitter Base Voltage (VEBO)	5V
hFE Min	270
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free