BC849AMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC849AMTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BC849
Power - Max
310mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
300MHz
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.347360
$3.34736
10
$3.157887
$31.57887
100
$2.979138
$297.9138
500
$2.810508
$1405.254
1000
$2.651423
$2651.423
BC849AMTF Product Details
BC849AMTF Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Product package SOT-23-3 comes from the supplier.The device has a 30V maximal voltage - Collector Emitter Breakdown.
BC849AMTF Features
the DC current gain for this device is 110 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA the supplier device package of SOT-23-3
BC849AMTF Applications
There are a lot of ON Semiconductor BC849AMTF applications of single BJT transistors.