BC849BLT3 Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.Parts of this part have transition frequencies of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849BLT3 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC849BLT3 Applications
There are a lot of ON Semiconductor BC849BLT3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
