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BC857CDW1T1G

  • BC857CDW1T1G
  • BC857CDW1T1G

BC857CDW1T1G

BC857CDW1T1G

ON Semiconductor

ON SEMICONDUCTOR - BC857CDW1T1G - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 380 mW, -100 mA, 270 hFE

SOT-23

BC857CDW1T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 380mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 100MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC857CD
Pin Count 6
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 380mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -650mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 420
Height 1.1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04209 $0.12627
6,000 $0.03679 $0.22074
15,000 $0.03150 $0.4725
30,000 $0.02974 $0.8922
75,000 $0.02797 $2.09775
150,000 $0.02503 $3.7545
BC857CDW1T1G Product Details
Description:

The BC857CDW1T1G is a PNP Bipolar Junction Transistor (BJT) from ON Semiconductor. It is designed for use in general purpose switching and amplification applications. It has a maximum collector-emitter voltage of -45V, a maximum frequency of 100MHz, a maximum power dissipation of 380mW, a maximum collector current of -100mA, and a maximum DC current gain of 270.

Features:
• PNP Bipolar Junction Transistor (BJT)
• Maximum Collector-Emitter Voltage: -45V
• Maximum Frequency: 100MHz
• Maximum Power Dissipation: 380mW
• Maximum Collector Current: -100mA
• Maximum DC Current Gain: 270

Applications:
• General purpose switching and amplification
• Audio amplifiers
• Motor control
• Power management
• Automotive applications

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