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BC857S

BC857S

BC857S

ON Semiconductor

BC857S datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available on our website

SOT-23

BC857S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 28mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 300mW
Terminal Form GULL WING
Current Rating -200mA
Frequency 200MHz
Base Part Number BC857
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 250MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage 650mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 125
Height 1mm
Length 2mm
Width 1.25mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
BC857S Product Details

BC857S Description


The  ON Semiconductor BC857S  is designed for general purpose amplifier applications at collector currents to 200 mA. 



BC857S Features


  • PNP Multi-Chip General Purpose Amplifier

  • Sourced from Process 68.

  • Pb-free Halide free



BC857S Applications


  • General usage and suitable for many different applications


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