BCW61DMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BCW61DMTF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BCW61
Power - Max
350mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
380 @ 2mA 5V
Current - Collector Cutoff (Max)
20nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
32V
Current - Collector (Ic) (Max)
100mA
BCW61DMTF Product Details
BCW61DMTF Overview
DC current gain in this device equals 380 @ 2mA 5V, which is the ratio of the base current to the collector current.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The product comes in the supplier device package of SOT-23-3.Detection of Collector Emitter Breakdown at 32V maximal voltage is present.
BCW61DMTF Features
the DC current gain for this device is 380 @ 2mA 5V the vce saturation(Max) is 550mV @ 1.25mA, 50mA the supplier device package of SOT-23-3
BCW61DMTF Applications
There are a lot of ON Semiconductor BCW61DMTF applications of single BJT transistors.