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BCW61DMTF

BCW61DMTF

BCW61DMTF

ON Semiconductor

BCW61DMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BCW61DMTF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BCW61
Power - Max 350mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 380 @ 2mA 5V
Current - Collector Cutoff (Max) 20nA
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 32V
Current - Collector (Ic) (Max) 100mA
BCW61DMTF Product Details

BCW61DMTF Overview


DC current gain in this device equals 380 @ 2mA 5V, which is the ratio of the base current to the collector current.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The product comes in the supplier device package of SOT-23-3.Detection of Collector Emitter Breakdown at 32V maximal voltage is present.

BCW61DMTF Features


the DC current gain for this device is 380 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the supplier device package of SOT-23-3

BCW61DMTF Applications


There are a lot of ON Semiconductor BCW61DMTF applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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