BD17910STU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD17910STU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
30W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
3A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD179
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
30W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
800mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.642240
$3.64224
10
$3.436075
$34.36075
100
$3.241581
$324.1581
500
$3.058095
$1529.0475
1000
$2.884995
$2884.995
BD17910STU Product Details
BD17910STU Overview
This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 800mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Collector current can be as low as 3A volts at its maximum.
BD17910STU Features
the DC current gain for this device is 63 @ 150mA 2V a collector emitter saturation voltage of 800mV the vce saturation(Max) is 800mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 3A a transition frequency of 3MHz
BD17910STU Applications
There are a lot of ON Semiconductor BD17910STU applications of single BJT transistors.