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BD242ATU

BD242ATU

BD242ATU

ON Semiconductor

BD242ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD242ATU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD242
Power - Max 40W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 3A
BD242ATU Product Details

BD242ATU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 600mA, 3A.Product comes in TO-220-3 supplier package.There is a 60V maximal voltage in the device due to collector-emitter breakdown.

BD242ATU Features


the DC current gain for this device is 25 @ 1A 4V
the vce saturation(Max) is 1.2V @ 600mA, 3A
the supplier device package of TO-220-3

BD242ATU Applications


There are a lot of ON Semiconductor BD242ATU applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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