BD242ATU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD242ATU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD242
Power - Max
40W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
3A
BD242ATU Product Details
BD242ATU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 600mA, 3A.Product comes in TO-220-3 supplier package.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
BD242ATU Features
the DC current gain for this device is 25 @ 1A 4V the vce saturation(Max) is 1.2V @ 600mA, 3A the supplier device package of TO-220-3
BD242ATU Applications
There are a lot of ON Semiconductor BD242ATU applications of single BJT transistors.