BD243A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD243A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Reach Compliance Code
unknown
Base Part Number
BD243
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
65W
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 6A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
6A
Transition Frequency
2MHz
VCEsat-Max
1.5 V
Power Dissipation Ambient-Max
65W
BD243A Product Details
BD243A Overview
This device has a DC current gain of 15 @ 3A 4V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 6A.As a result, the part has a transition frequency of 2MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
BD243A Features
the DC current gain for this device is 15 @ 3A 4V the vce saturation(Max) is 1.5V @ 1A, 6A a transition frequency of 2MHz
BD243A Applications
There are a lot of ON Semiconductor BD243A applications of single BJT transistors.