BD243TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD243TU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BD243
Power - Max
65W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 3A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 6A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
6A
BD243TU Product Details
BD243TU Overview
DC current gain in this device equals 15 @ 3A 4V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 1.5V @ 1A, 6A means Ic has reached its maximum value(saturated).There is no device package available from the supplier for this product.There is a 45V maximal voltage in the device due to collector-emitter breakdown.
BD243TU Features
the DC current gain for this device is 15 @ 3A 4V the vce saturation(Max) is 1.5V @ 1A, 6A the supplier device package of TO-220-3
BD243TU Applications
There are a lot of ON Semiconductor BD243TU applications of single BJT transistors.