Welcome to Hotenda.com Online Store!

logo
userjoin
Home

BD243TU

BD243TU

BD243TU

ON Semiconductor

BD243TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD243TU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number BD243
Power - Max 65W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 6A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 6A
BD243TU Product Details

BD243TU Overview


DC current gain in this device equals 15 @ 3A 4V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 1.5V @ 1A, 6A means Ic has reached its maximum value(saturated).There is no device package available from the supplier for this product.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

BD243TU Features


the DC current gain for this device is 15 @ 3A 4V
the vce saturation(Max) is 1.5V @ 1A, 6A
the supplier device package of TO-220-3

BD243TU Applications


There are a lot of ON Semiconductor BD243TU applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News