BD436T Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 85 @ 500mA 1V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.

BD436T Features

the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 3MHz

BD436T Applications

There are a lot of ON Semiconductor BD436T applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface